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STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control

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STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control

STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control
STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control

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Detalhes do produto:
Lugar de origem: CHINA
Marca: STMicroelectronics
Certificação: CE, GCF, ROHS
Número do modelo: STP55NF06FP
Condições de Pagamento e Envio:
Quantidade de ordem mínima: 1
Preço: negotiable
Detalhes da embalagem: Embalado na bandeja original primeiro, depois a caixa, finalmente a bolsa de bolha para embalagem ex
Tempo de entrega: 3-5 dias úteis após receber o pagamento
Termos de pagamento: T/T, Western Union,
Habilidade da fonte: 1000pcs por mês
Descrição de produto detalhada
Função: Advertido, intensificador Configuração de saída: Positivo ou negativo
Topologia: Buck, Boost Tipo de saída: Ajustável
Número de saídas: 1
Destacar:

N-Channel Power MOSFET 55A 60V

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TO-220FP MOSFET low gate charge

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Logic Level MOSFET high speed switching

STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control

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Features

1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02andOmega; (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation.

2:High Current Handling: Capable of handling up to 55A continuous drain current, with even higher pulse current capability, making it suitable for high-power applications.

3:Logic-Level Gate Drive: Low threshold voltage (Vgs(th) typically 2V to 4V), allowing it to be directly driven by 5V or 3.3V microcontrollers (e.g., Arduino, STM32) without requiring level-shifting circuits.

4:Fast Switching Speed: Optimized for high-frequency switching applications, such as SMPS and PWM motor control, reducing switching losses.

5:Fully Insulated Package (TO-220FP FullPak): The TO-220FP encapsulation fully encloses the metal heatsink, providing enhanced insulationandnbsp;and safety while simplifying assembly by eliminating the need for additional insulation pads.

6:High Voltage Rating: Drain-source voltage (Vds) rating of 60V, offering sufficient margin for 12V, 24V, and higher voltage systems.

7:Rugged Design: Avalanche rated, ensuring durability under energy surges from inductive load switching (e.g., motors, relays).

8:Low Gate Charge (Qg): Low total gate charge reduces driving requirements and enables efficient high-speed switching.

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Applications

■ Switching application

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Description

These Power MOSFETs have been developed using STMicroelectronicsandrsquo; unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

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INFORMATION

Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25anddeg;C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250andmicro;A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
andplusmn;20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55anddeg;C ~ 175anddeg;C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
Base Product Number

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Drawing

STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control 0

Our advantage :phones, PDAand#39;s, notebook comput.ers

  • High quality products --- our offers are 100% new and original, ROHS
  • Competitive price --- good Purchase channels with good price.
  • Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
  • Adequate inventory --- With the support of our strong Purchasing team,
  • Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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